DocumentCode
1955271
Title
Simulating the Radiation Performance of Simox Buried Oxides Using a Trap-Detrap Model
Author
Kimoton, D. ; Kerr, John
Author_Institution
Plessey Semiconductors Ltd., United Kingdom
fYear
1992
fDate
6-8 Oct. 1992
Firstpage
156
Lastpage
157
Keywords
Accuracy; Charge measurement; Current measurement; MOSFETs; Power measurement; Predictive models; Radiation hardening; Radiative recombination; Silicon compounds; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1992. IEEE International
Conference_Location
Ponte Vedra Beach, FL
ISSN
1078-621X
Print_ISBN
0-7803-7439-8
Type
conf
DOI
10.1109/SOI.1992.664838
Filename
664838
Link To Document