Terahertz quasi-optical modulators based on integrated p-i-n-structures

Theoretical and experimental investigations of silicon surface oriented integrated p-i-n structures as quasi-optical modulators of terahertz frequency range have been done. The problem of double injection into the i-region has been solved numerically, and a possible role of nonlinearity in boundary conditions at injecting junctions is pointed out. Our simulations demonstrate that an effective modulation of terahertz wave beams by Si p-i-n structures can be achieved up to 2-2.5 THz frequencies. Measurements at 400 GHz confirm the results of simulations. A possibility of modulation of picosecond monopulses is also investigated.