Title :
Amorphous and polysilicon device simulations
Author :
Shaw, J.G. ; Hack, M.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
Thin-film transistors (TFTs) and photodiodes fabricated from hydrogenated amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) are now being used in many commercial large-area electronic applications; in particular high-resolution active-matrix flat-panel displays and electrographic printers. In order to develop new cost-effective applications using this technology, it is important to be able to accurately model the behavior of these devices. This paper describes some of the capabilities of the MANIFEST computer program which has been developed to simulate amorphous and polysilicon devices in two spatial dimensions and time.<>
Keywords :
amorphous semiconductors; digital simulation; electronic engineering computing; elemental semiconductors; photodiodes; semiconductor device models; silicon; thin film transistors; 2D simulator; MANIFEST computer program; Si:H; TFTs; amorphous Si; model; photodiodes; polycrystalline Si; polysilicon device simulations; thin-film transistors; Amorphous semiconductors; Photodiodes; Semiconductor device modeling; Silicon; Simulation; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307505
