DocumentCode
1955367
Title
Amorphous and polysilicon device simulations
Author
Shaw, J.G. ; Hack, M.
Author_Institution
Cornell Univ., Ithaca, NY, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
915
Lastpage
918
Abstract
Thin-film transistors (TFTs) and photodiodes fabricated from hydrogenated amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) are now being used in many commercial large-area electronic applications; in particular high-resolution active-matrix flat-panel displays and electrographic printers. In order to develop new cost-effective applications using this technology, it is important to be able to accurately model the behavior of these devices. This paper describes some of the capabilities of the MANIFEST computer program which has been developed to simulate amorphous and polysilicon devices in two spatial dimensions and time.<>
Keywords
amorphous semiconductors; digital simulation; electronic engineering computing; elemental semiconductors; photodiodes; semiconductor device models; silicon; thin film transistors; 2D simulator; MANIFEST computer program; Si:H; TFTs; amorphous Si; model; photodiodes; polycrystalline Si; polysilicon device simulations; thin-film transistors; Amorphous semiconductors; Photodiodes; Semiconductor device modeling; Silicon; Simulation; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307505
Filename
307505
Link To Document