• DocumentCode
    1955367
  • Title

    Amorphous and polysilicon device simulations

  • Author

    Shaw, J.G. ; Hack, M.

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • fYear
    1992
  • fDate
    13-16 Dec. 1992
  • Firstpage
    915
  • Lastpage
    918
  • Abstract
    Thin-film transistors (TFTs) and photodiodes fabricated from hydrogenated amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) are now being used in many commercial large-area electronic applications; in particular high-resolution active-matrix flat-panel displays and electrographic printers. In order to develop new cost-effective applications using this technology, it is important to be able to accurately model the behavior of these devices. This paper describes some of the capabilities of the MANIFEST computer program which has been developed to simulate amorphous and polysilicon devices in two spatial dimensions and time.<>
  • Keywords
    amorphous semiconductors; digital simulation; electronic engineering computing; elemental semiconductors; photodiodes; semiconductor device models; silicon; thin film transistors; 2D simulator; MANIFEST computer program; Si:H; TFTs; amorphous Si; model; photodiodes; polycrystalline Si; polysilicon device simulations; thin-film transistors; Amorphous semiconductors; Photodiodes; Semiconductor device modeling; Silicon; Simulation; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0817-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1992.307505
  • Filename
    307505