DocumentCode :
1955389
Title :
Vacuum Chemical Epitaxial Growth of High Quality Gaas Films Using Dimethylamine Gallane
Author :
Malocsay, E. ; Fraas, L.M. ; Sundaram, V.S.
Author_Institution :
Boeing High Technology Center, WA
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
4
Lastpage :
5
Keywords :
Aluminum; Carbon compounds; Chemicals; Conductivity; Epitaxial growth; Gallium arsenide; Inductors; MOCVD; Molecular beam epitaxial growth; Photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664847
Filename :
664847
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1955389
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