DocumentCode :
1955413
Title :
Molecular dynamics simulation on the out-of plane thermal conductivity of monocrystal germanium thin-film
Author :
Zhang, Xingli ; Sun, Zhaowei ; Wu, Guoqiang
Author_Institution :
Res. Center of Satellite Technol., Harbin Inst. of Technol., Harbin
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
17
Lastpage :
20
Abstract :
We establish a heat conduction model to investigate the thermal conductivities of monocrystal germanium thin-film based on the anisotropic non-equilibrium molecular dynamics (NEMD) arithmetic and corresponding Tersoff potential energy function. The simulation results indicate that the thermal conductivity of monocrystal germanium thin-film is remarkably lower than corresponding bulk experimental data and increase with increasing the film thickness. Furthermore, the thermal conductivity of that relates to film thickness linearly in the simulative range. For a given film thickness, it vary much small with increasing the temperature, and its size effect is significant comparing with the bulk germanium crystal. This work shows that molecular dynamics, applied under the correct conditions, is a viable tool for calculating the thermal conductivity of monocrystal germanium thin-films. More generally, it demonstrates the potential of molecular dynamics for ascertaining microscale thermophysical properties in complex structures.
Keywords :
elemental semiconductors; germanium; molecular dynamics method; potential energy functions; semiconductor thin films; size effect; thermal conductivity; Tersoff potential energy function; anisotropic nonequilibrium molecular dynamics arithmetic; complex structures; film thickness; heat conduction model; microscale thermophysical properties; monocrystal germanium thin-film; size effect; thermal conductivities; Germanium; Thermal conductivity; Transistors; molecular dynamics; monocrystal germanium thin-film; size effect; thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068517
Filename :
5068517
Link To Document :
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