DocumentCode
1955413
Title
Molecular dynamics simulation on the out-of plane thermal conductivity of monocrystal germanium thin-film
Author
Zhang, Xingli ; Sun, Zhaowei ; Wu, Guoqiang
Author_Institution
Res. Center of Satellite Technol., Harbin Inst. of Technol., Harbin
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
17
Lastpage
20
Abstract
We establish a heat conduction model to investigate the thermal conductivities of monocrystal germanium thin-film based on the anisotropic non-equilibrium molecular dynamics (NEMD) arithmetic and corresponding Tersoff potential energy function. The simulation results indicate that the thermal conductivity of monocrystal germanium thin-film is remarkably lower than corresponding bulk experimental data and increase with increasing the film thickness. Furthermore, the thermal conductivity of that relates to film thickness linearly in the simulative range. For a given film thickness, it vary much small with increasing the temperature, and its size effect is significant comparing with the bulk germanium crystal. This work shows that molecular dynamics, applied under the correct conditions, is a viable tool for calculating the thermal conductivity of monocrystal germanium thin-films. More generally, it demonstrates the potential of molecular dynamics for ascertaining microscale thermophysical properties in complex structures.
Keywords
elemental semiconductors; germanium; molecular dynamics method; potential energy functions; semiconductor thin films; size effect; thermal conductivity; Tersoff potential energy function; anisotropic nonequilibrium molecular dynamics arithmetic; complex structures; film thickness; heat conduction model; microscale thermophysical properties; monocrystal germanium thin-film; size effect; thermal conductivities; Germanium; Thermal conductivity; Transistors; molecular dynamics; monocrystal germanium thin-film; size effect; thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068517
Filename
5068517
Link To Document