Title :
Anomalous behaviour of surface leakage currents in heavily-doped MOS structures
Author :
Hurkx, G.A.M. ; Peek, H.L. ; Slotboom, J.W. ; Windgassen, R.A.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The anomalous gate voltage- and dopant dependence of surface leakage currents in heavily-doped MOS gated-diode structures is described. It is shown that, by using a recombination model which includes tunnelling effects, a good quantitative description of surface leakage currents can be obtained. This resulted in a revision of the classical description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented.<>
Keywords :
doping profiles; electron-hole recombination; heavily doped semiconductors; leakage currents; metal-insulator-semiconductor structures; semiconductor device models; tunnelling; MOS gated-diode structures; anomalous behaviour; dopant dependence; gate voltage dependence; heavily-doped MOS structures; recombination model; surface leakage currents; tunnelling effects; Charge carrier lifetime; Leakage currents; MIS devices; Semiconductor device modeling; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307506
