DocumentCode :
1955441
Title :
High Indium Utilization Using Edmi and Teg for Ga0.5In0.5P Growth by Lp-Movpe
Author :
Chou, K.C. ; Lee, H.D. ; Pathangey, B. ; Anderson, T.J. ; Melas, A.
Author_Institution :
Department of Chemical Engineering, University of Florida
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
9
Lastpage :
10
Keywords :
Gallium arsenide; Indium; Photoluminescence; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664850
Filename :
664850
Link To Document :
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