Title :
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
Author :
Zanoni, Enrico ; Crabbe ; Stork, J.M.C. ; Pavan, P. ; Verzellesi, G. ; Vendrame, L. ; Canali, Carlo
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Abstract :
A complete analytical model for impact ionization effects in bipolar transistors, which is able to predict the behaviour of advanced devices up to breakdown, is presented. A simple expression of the carrier mean energy suitable for circuit simulation is used to calculate the device multiplication coefficient and enables the influence of non-equilibrium transport on impact ionization to be accounted for. The role played by the reverse base current in determining the snap-back of the common base output characteristics is investigated both experimentally and theoretically.<>
Keywords :
bipolar transistors; elemental semiconductors; impact ionisation; semiconductor device models; silicon; simulation; Si; Si bipolar transistors; advanced devices; analytical model; avalanche breakdown; carrier mean energy; common base output characteristics; device multiplication coefficient; impact ionization effects; nonequilibrium transport; reverse base current; simulation; snap-back determination; Bipolar transistors; Impact ionization; Semiconductor device modeling; Silicon; Simulation;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307508
