DocumentCode
1955483
Title
Complete bipolar simulation using STORM
Author
Jones, S.K. ; Gerodolle, A. ; Lombardi, C. ; Schafer, M. ; Hill, C.
Author_Institution
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
931
Lastpage
934
Abstract
Complete simulation of advanced double layer polysilicon bipolar technology is presented using 2D process, equipment and device modelling in the STORM simulation environment. Polysilicon emitter size scaling and the perimeter depletion effect are studied. Process simulation results for non-planar polysilicon topographies are presented and the consequences of these on the device characteristics are explored.<>
Keywords
bipolar integrated circuits; digital simulation; electronic engineering computing; elemental semiconductors; semiconductor device models; semiconductor process modelling; silicon; 2D device modelling; 2D process modelling; STORM; Si; advanced double layer polysilicon bipolar technology; bipolar simulation; nonplanar polysilicon topographies; perimeter depletion effect; polysilicon emitter size scaling; simulation environment; Bipolar integrated circuits; Semiconductor device modeling; Semiconductor process modeling; Silicon; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307509
Filename
307509
Link To Document