DocumentCode
1955619
Title
Low temperature process for CMUT fabrication with wafer bonding technique
Author
Tsuji, Yukihide ; Kupnik, Mario ; Khuri-Yakub, Butrus T.
Author_Institution
Center Res. Lab., NEC Corp., Sagamihara, Japan
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
551
Lastpage
554
Abstract
We present the successful fabrication of capacitive micromachined ultrasonic transducers (CMUTs) based on low temperature wafer bonding (<;400°C). Such a fabrication process enables the direct integration of CMUTs on top of IC substrates, and requires only two additional lithography steps for fabricating the complete CMUT. Our approach benefits from both the integrated electronics and the well-controlled performance of CMUTs with single-crystal silicon plates. The yield of the CMUTs is almost 100%, and the standard deviation of resonance frequency in air is less than 1% in the whole 4 inch wafer.
Keywords
capacitive sensors; integrated circuits; lithography; micromachining; micromechanical devices; ultrasonic imaging; ultrasonic transducers; wafer bonding; CMUT yield; capacitive micromachined ultrasonic transducers; integrated circuit substrates; integrated electronics; lithography; low temperature CMUT fabrication process; low temperature wafer bonding; resonance frequency; single crystal silicon plates; wafer bonding technique; Acoustics; Resonant frequency; Silicon; Substrates; Titanium; Ultrasonic imaging; Wafer bonding; Capacitive micromachined ultrasonic transducer; low temperature process; monolithic integration; wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location
San Diego, CA
ISSN
1948-5719
Print_ISBN
978-1-4577-0382-9
Type
conf
DOI
10.1109/ULTSYM.2010.5935632
Filename
5935632
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