DocumentCode :
1955619
Title :
Low temperature process for CMUT fabrication with wafer bonding technique
Author :
Tsuji, Yukihide ; Kupnik, Mario ; Khuri-Yakub, Butrus T.
Author_Institution :
Center Res. Lab., NEC Corp., Sagamihara, Japan
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
551
Lastpage :
554
Abstract :
We present the successful fabrication of capacitive micromachined ultrasonic transducers (CMUTs) based on low temperature wafer bonding (<;400°C). Such a fabrication process enables the direct integration of CMUTs on top of IC substrates, and requires only two additional lithography steps for fabricating the complete CMUT. Our approach benefits from both the integrated electronics and the well-controlled performance of CMUTs with single-crystal silicon plates. The yield of the CMUTs is almost 100%, and the standard deviation of resonance frequency in air is less than 1% in the whole 4 inch wafer.
Keywords :
capacitive sensors; integrated circuits; lithography; micromachining; micromechanical devices; ultrasonic imaging; ultrasonic transducers; wafer bonding; CMUT yield; capacitive micromachined ultrasonic transducers; integrated circuit substrates; integrated electronics; lithography; low temperature CMUT fabrication process; low temperature wafer bonding; resonance frequency; single crystal silicon plates; wafer bonding technique; Acoustics; Resonant frequency; Silicon; Substrates; Titanium; Ultrasonic imaging; Wafer bonding; Capacitive micromachined ultrasonic transducer; low temperature process; monolithic integration; wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
ISSN :
1948-5719
Print_ISBN :
978-1-4577-0382-9
Type :
conf
DOI :
10.1109/ULTSYM.2010.5935632
Filename :
5935632
Link To Document :
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