DocumentCode
1955660
Title
Fabrication and operation of MOS tunneling cathode
Author
Yokoo, K. ; Sato, S. ; Tanaka, H. ; Murota, J. ; Ono, S.
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
965
Lastpage
968
Abstract
We have fabricated a MOS electron tunneling cathode with ultrathin SiO/sub 2/ and examined the emission characteristics. We found that the emission occurred from an entire gate area by electron tunneling through the potential barrier in the MOS diode and the emission current was 0.7% of the total current flowing through the diode. Additionally, the emission was found to be nearly independent of pressure and to be stable in an amorphous Si gate MOS cathode.<>
Keywords
cathodes; electron emission; metal-insulator-semiconductor devices; tunnelling; MOS diode; MOS tunneling cathode; Si-SiO/sub 2/-Al; amorphous Si gate; electron tunneling; fabrication; potential barrier; ultrathin SiO/sub 2/; Cathodes; Electron emission; MIS devices; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307517
Filename
307517
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