Title :
RF high-Q spiral inductor design
Author :
David, Jean-Baptiste ; Musalem, Francois-Xavier ; Albert, Patrick
Author_Institution :
MEMScaP S.A., Saint Ismier, France
Abstract :
Post-processing of silicon wafers combined with MEMS design techniques can be used to create a variety of high-performance active and passive devices for use in RF and millimeter wave telecommunications products. These devices have the potential to replace off-chip passives and enable design of single-chip radio systems. In this paper, we will focus on the design of a high-Q inductor and describe each of the phases of its design
Keywords :
electronic design automation; elemental semiconductors; finite element analysis; inductors; integrated circuit design; micromechanical devices; radio equipment; silicon; CAD; FEM; MEMS design; RF high-Q inductor; RF telecommunications products; Si; above IC technology; high performance active devices; millimeter wave telecommunications products; passive devices; single-chip radio systems; Coils; Dielectric losses; Dielectric substrates; Geometry; Inductors; Micromechanical devices; Passivation; Radio frequency; Silicon; Spirals;
Conference_Titel :
Sensors for Industry, 2001. Proceedings of the First ISA/IEEE Conference
Conference_Location :
Rosemont, IL
Print_ISBN :
0-7803-6659-X
DOI :
10.1109/SFICON.2001.968503
