Title :
A new abrasive-free, chemical-mechanical-polishing technique for aluminum metallization of ULSI devices
Author :
Hayashi, Y. ; Kikuta, K. ; Kikkawa, T.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A new polishing technique for the aluminum (Al) metallization is developed, referred to as an Abrasive-Free, Chemical-Mechanical-Polishing (AFP) technique, in which aqueous amine and hydrogen-peroxide (H/sub 2/O/sub 2/) solution is used as a polishing liquid. Scratch-free Al plugs embedded in SiO/sub 2/ films are obtained by the AFP with the high polishing selectivity of the Al to SiO/sub 2/.<>
Keywords :
VLSI; aluminium; integrated circuit technology; metallisation; polishing; Al; Al metallization; Al-SiO/sub 2/; H/sub 2/O/sub 2/; H/sub 2/O/sub 2/ solution; IC fabrication; ULSI devices; abrasive-free process; aqueous amine; chemical-mechanical-polishing technique; polishing liquid; scratch-free Al plugs; Aluminum; Integrated circuit fabrication; Metallization; Very-large-scale integration;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307520
