A 0.2- mu m contact filling by 450 degrees C-hydrazine-reduced TiN film with low resistivity

Author

Suzuki, T. ; Ohba, T. ; Furumura, Y. ; Tsuchikawa, H.

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

979

Lastpage

981

Abstract

Because of the poor step coverage of TiN film by sputter and plasma CVD, the blanket-W for contact plug can not be used beyond 256 Mbit DRAMs. Although a thermal LPCVD-TiN using titanium tetrachloride (TiCl/sub 4/)-ammonia (NH/sub 3/) realizes a conformal deposition, the deposition temperature is too high for devices use (>7000 degrees C). We have developed, for the first time, methylhydrazine (MH) reduced TiN-CVD and succeeded in realizing a low-temperature (<500 degrees C) TiN film with a low chlorine (Cl) concentration that can fill a 0.2 mu m contact hole. A commercial single-wafer LPCVD reactor was used in these experiments. The TiCl/sub 4/-MH reaction proves the capability of low-temperature, low-resistivity, and no-damage contact metallization. The 0.2 mu m contact filling opens the way for the multilevel interconnection of giga-bit devices.<>

Keywords

CVD coatings; chemical vapour deposition; integrated circuit technology; metallisation; titanium compounds; 0.2 micron; 450 C; Mbit DRAMs; TiCl/sub 4/; TiN; conformal deposition; contact filling; contact metallization; deposition temperature; giga-bit devices; hydrazine-reduced TiN film; low Cl concentration; low pressure CVD; low resistivity contact; low-temperature CVD; methylhydrazine; multilevel interconnection; single-wafer LPCVD reactor; CVD; Coatings; Integrated circuit fabrication; Metallization; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307521

Filename

307521