Silicon Nanowire fabricated by MEMS technology and its application in biochemical detection

Author

Gong, Yibin ; Gao, Huamin ; Liu, Xiang ; Liu, Wenping ; Li, Tie ; Zhou, Ping ; Wang, Yuelin

Author_Institution

State Key Labs. of Transducer Technol., Chinese Acad. of Sci., Shanghai

fYear

2009

fDate

5-8 Jan. 2009

Firstpage

86

Lastpage

89

Abstract

Silicon nanowires (SiNWs) fabricated by MEMS technology and its DC response to antigen (HBsAg) was demonstrated in this paper. Anisotropic self-stop etching was employed to ensure low cost batch production. Electrical characterization revealed that, field effect of such device, with SiNWs´ width and thickness in the order of 10 nm, guaranteed linear resistance modulation in a wide range, which made it a promising candidate for high sensitivity biochemical detection. Antigen (HBsAg) detection experiments presented that the sensitivity of the sensor exhibited an obvious dependence upon the length of SiNWs, which indicated a new way to improve the performance of such a kind of biosensor.

Keywords

biosensors; chemical sensors; elemental semiconductors; etching; microsensors; nanowires; silicon; DC response; MEMS technology; Si; anisotropic self-stop etching; antigen detection; batch production; biochemical detection; biosensor; electrical characterization; field effect; linear resistance modulation; sensor sensitivity; silicon nanowire; size 10 nm; Anisotropic magnetoresistance; Biosensors; Costs; Electric resistance; Etching; Immune system; Micromechanical devices; Production; Sensor phenomena and characterization; Silicon; Biosensor; FET; MEMS; Silicon Nanowire;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-4629-2

Electronic_ISBN

978-1-4244-4630-8

Type

conf

DOI

10.1109/NEMS.2009.5068532

Filename

5068532