Title :
Modeling of radiating effects in transistors
Author :
Aldamzharov, K.B. ; Tuyakbayev, A.A. ; Tuyakbayev, D.A.
Author_Institution :
Acad. of the Civil Aviation, Almaty, Kazakhstan
Abstract :
In this work the single-level model for determination of the constant of radiating change of lifetime of minority carriers in the base of n-p-n transistors, also DLTS spectra in the base area of n-p-n transistors are modeled and results of calculations are obtained.
Keywords :
bipolar transistors; p-n heterojunctions; radiation effects; DLTS spectra; bipolar transistor; minority carrier; n-p-n transistor; radiating change; radiating effect; single-level model; Alloying; Boron; Charge carriers; Radiation effects; Silicon; Transistors;
Conference_Titel :
Microwaves, Radar and Remote Sensing Symposium (MRRS), 2011
Conference_Location :
Kiev
Print_ISBN :
978-1-4244-9641-9
DOI :
10.1109/MRRS.2011.6053677
