Title :
High-frequency characterization of 30 GHz p-type modulation-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers
Author :
Weisser, S. ; Ralston, J.D. ; Larkins, E.C. ; Esquivias, I. ; Tasker, P.J. ; Fleissner, J. ; Rosenzweig, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
We report the first semiconductor laser to achieve a direct modulation bandwidth of 30 GHz, using p-type modulation-doped (MD) In/sub 0.35/Ga/sub 0.65/As/GaAs QWs. The high-speed properties of lasers with both MD and undoped active regions, but otherwise identical epilayer structures, are compared. The doped lasers demonstrate modulation bandwidths of 20 GHz and 30 GHz at CW bias currents of 50 mA and 114 mA, respectively, in a simple 3*200 mu m/sup 2/ mesa structure.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; 114 mA; 20 GHz; 30 GHz; 50 mA; CW bias currents; In/sub 0.35/Ga/sub 0.65/As/GaAs; InGaAs-GaAs; direct modulation bandwidth; epilayer structures; high-frequency characterization; mesa structure; modulation bandwidths; modulation-doped active regions; p-type modulation-doped MQW lasers; semiconductor laser; undoped active regions; Gallium compounds; Indium compounds; Optical modulation; Quantum wells; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor lasers;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307531
