DocumentCode
1955928
Title
SOI-based capacitive micromechanical resonator with submicron gap-spacing
Author
Liu, Yi ; Tang, Yaquan ; Xiaomei Yu
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2009
fDate
5-8 Jan. 2009
Firstpage
130
Lastpage
133
Abstract
MEMS resonators are promising as micromechanical oscillators and filters in wireless communication systems. This paper reports on the fabrication and characterization of single crystal silicon (SCS) disk resonators with sub-micro capacitive gaps. Vertical capacitive gaps as small as 100 nm have been demonstrated in this work. High frequency disk resonators have been implemented and tested.
Keywords
crystal resonators; microfabrication; micromechanical resonators; mobile communication; silicon-on-insulator; SOI; Si-SiO2; capacitive micromechanical resonator; filter; high resonance frequency; micromechanical oscillator; single crystal silicon disk resonator; submicron gap-spacing; vertical capacitive gap; wireless communication system; Driver circuits; Electrodes; Fabrication; Impedance; Micromechanical devices; Optical resonators; Resonance; Resonant frequency; Silicon; Voltage; MEMS; SOI; disk resonator; sub-micro gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4244-4629-2
Electronic_ISBN
978-1-4244-4630-8
Type
conf
DOI
10.1109/NEMS.2009.5068542
Filename
5068542
Link To Document