Title :
0.1 mu m p-channel MOSFETs with 51 GHz f/sub T/
Author :
Lee, K.F. ; Yan, R.H. ; Jeon, D.Y. ; Kim, Y.O. ; Tennant, D.M. ; Westerwick, E.H. ; Early, K. ; Chin, G.M. ; Morris, M.D. ; Johnson, R.W. ; Liu, T.M. ; Kistler, R.C. ; Voshchenkov, A.M. ; Swartz, R.G. ; Ourmazd, A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We report a record 51 GHz f/sub T/ for 0.1 mu m gate length pMOSFETs. Maximum transconductance observed was 330 mS/mm, subthreshold slope was 87 mV/decade. We have also obtained gate sheet resistance of 4-5 Omega / Square Operator at 0.1 mu m gate length using platinum silicide. To reduce the overlap capacitance due to a relatively deep junction, a two-step sidewall process was implemented.<>
Keywords :
capacitance; insulated gate field effect transistors; metallisation; semiconductor technology; 0.1 micron; 51 GHz; gate length; gate sheet resistance; maximum transconductance; overlap capacitance; p-channel MOSFETs; platinum silicide; subthreshold slope; two-step sidewall process; Capacitance; Insulated gate FETs; Metallization; Semiconductor device fabrication;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307532
