Fabrication of nanobeam using Focused ion beam (FIB) and KOH etching

Author

Cheng, Haitao ; Yang, Heng ; Wang, Yuelin

Author_Institution

State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Shanghai

fYear

2009

fDate

5-8 Jan. 2009

Firstpage

139

Lastpage

142

Abstract

A new process method is developed to fabricate beam into nanometer scale in width. Assisted by Focused ion beam (FIB), one 122 nm silicon nanobeam is obtained on (110) Silicon-On-Insulator (SOI) substrate, based on the material and process properties of crystal silicon. After KOH etching, sidewalls with (111) terminations are all vertical to (110) surface plane. This presented process method has some merits such as no surface damage, high processing resolution, and good repeatability.

Keywords

focused ion beam technology; nanoelectromechanical devices; nanofabrication; silicon-on-insulator; sputter etching; KOH etching; focused ion beam; high processing resolution; nanobeam fabrication; silicon nanobeam; silicon-on-insulator substrate; Anisotropic magnetoresistance; Electron beams; Fabrication; Ion beams; Lithography; Micromechanical devices; Nanoelectromechanical systems; Silicon on insulator technology; Substrates; Wet etching; FIB; Nanobeam; anisotropic etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4244-4629-2

Electronic_ISBN

978-1-4244-4630-8

Type

conf

DOI

10.1109/NEMS.2009.5068544

Filename

5068544