DocumentCode

1955986

Title

Theoretical Analysis and Computer Simulation of Double Sided n+-n-p-p+ Trapatt Diode Structures

Author

Cottam, M.G. ; Geraghty, S.R.

Author_Institution

Department of Physics, University of Essex, Colchester, Essex, England.

Volume

1

fYear

1973

fDate

4-7 Sept. 1973

Firstpage

1

Lastpage

4

Keywords

Charge carrier processes; Computer simulation; Diodes; Doping; Electron mobility; Electron traps; Frequency; Plasma density; Silicon; Upper bound;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1973. 3rd European

Conference_Location

Brussels, Belgium

Type

conf

DOI

10.1109/EUMA.1973.331601

Filename

4130184