Title :
Theoretical Analysis and Computer Simulation of Double Sided n+-n-p-p+ Trapatt Diode Structures
Author :
Cottam, M.G. ; Geraghty, S.R.
Author_Institution :
Department of Physics, University of Essex, Colchester, Essex, England.
Keywords :
Charge carrier processes; Computer simulation; Diodes; Doping; Electron mobility; Electron traps; Frequency; Plasma density; Silicon; Upper bound;
Conference_Titel :
Microwave Conference, 1973. 3rd European
Conference_Location :
Brussels, Belgium
DOI :
10.1109/EUMA.1973.331601
