Title :
Theoretical Considerations of Baritts in GaAs
Author :
Englefield, C.G. ; Robson, P.N. ; Sitch, J.
Author_Institution :
Department of Electrical Engineering, University of Alberta, Edmonton, Canada.
Keywords :
Charge carrier density; Conductivity; Current density; Delay; Electron mobility; Equations; Frequency; Gallium arsenide; Silicon; Space charge;
Conference_Titel :
Microwave Conference, 1973. 3rd European
Conference_Location :
Brussels, Belgium
DOI :
10.1109/EUMA.1973.331604
