DocumentCode
1956094
Title
Injection-enhanced defect reactions in III-V light emitting diodes
Author
Torchinskaya, T.V. ; Rybak, A.M.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear
1994
fDate
11-14 April 1994
Firstpage
454
Lastpage
457
Abstract
Injection-enhanced defect transformations in GaP LEDs with active layer doped by N (GaP:N), or N, Zn, and O (GaP:N,ZnO), as well as AlGaAs:Zn, AlGaAs:Ge, and GaAs:Si LEDs were investigated both theoretically and experimentally. Four principal types of defect transformations were determined to take place in these LEDs. Their nature and parameters were determined from the comparison of theoretical and experimental data.<>
Keywords
III-V semiconductors; light emitting diodes; reliability; AlGaAs:Ge; AlGaAs:Zn; GaAs:Si; GaP:N; GaP:N,ZnO; III-V light emitting diodes; active layer; defect transformations; device reliability; injection-enhanced defect reactions; transformation parameters; Degradation; Diffraction; Etching; III-V semiconductor materials; Kinetic theory; Light emitting diodes; Photoconductivity; Physics; Semiconductor devices; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307800
Filename
307800
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