DocumentCode
1956134
Title
Reliability of a GaAs MMIC process based on 0.5 /spl mu/m Au/Pd/Ti gate MESFETs
Author
Bensoussan, A. ; Coval, P. ; Roesch, W.J. ; Rubalcava, T.
Author_Institution
Alcatel Espace, Toulouse, France
fYear
1994
fDate
11-14 April 1994
Firstpage
434
Lastpage
445
Abstract
In a cooperative Supplier/Customer program, qualification testing was completed on GaAs Technology Characterization Vehicles (TCVs), Standard Evaluation Circuits (SECs) and MMICs for application in space. Degradation was measured in multiple 4,000 hour tests at 200/spl deg/C and 225/spl deg/C. Comparisons between circuits, TCVs, and historical database were favourable and a new diffusion model for MESFET wearout was developed.<>
Keywords
III-V semiconductors; MMIC; circuit reliability; field effect integrated circuits; gallium arsenide; integrated circuit testing; 0.5 micron; 200 to 225 degC; 4000 h; Au-Pd-Ti; Au/Pd/Ti gate MESFETs; GaAs; MESFET wearout; MMIC process; Standard Evaluation Circuits; Technology Characterization Vehicles; diffusion model; historical database; qualification testing; reliability; space applications; Circuit testing; Databases; Degradation; Gallium arsenide; Gold; MESFET circuits; MMICs; Qualifications; Space technology; Space vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307802
Filename
307802
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