dv/dt induced latching failure in 1200 V/400 A halfbridge IGBT modules

Author

Wu, Wuchen ; Held, Marcel ; Umbricht, Niklaus ; Birolini, Alessandro

Author_Institution

Reliability Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1994

fDate

11-14 April 1994

Firstpage

420

Lastpage

424

Abstract

A reliability investigation of 1200 V/400 A halfbridge IGBT modules by switching test is reported in this paper. Latch up failure was observed in the un-tested part of IGBT modules, which resulted in catastrophic craterlike melting pits in emitter bonding pads and then the tested part of IGBT modules was destroyed by very high power dissipation. Fast turn on due to a small gate resistance caused a high dv/dt (about 4000 Vspl mu/s) which triggered the latching failure.<>

Keywords

bridge circuits; circuit reliability; insulated gate bipolar transistors; modules; power electronics; semiconductor switches; 1200 V; 400 A; catastrophic craterlike melting pits; dv/dt induced latching failure; emitter bonding pads; gate resistance; halfbridge IGBT modules; reliability; switching test; turn on; very high power dissipation; Bonding; Capacitors; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Latches; Power semiconductor switches; Semiconductor device reliability; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307804

Filename

307804