High Performance Organic Field Effect Transistor with Tri-Gate

In this paper, improvements are reported in terms of device performance by modification in the device geometry of bottom gate staggered organic field effect transistor (OFET). The device geometry with three independent gates is investigated at different gate voltages and detailed studies of the devices are simulated with the help of 2-D simulator (Atlas simulator by Silvaco). In the proposed device the electric field is improved and charge accumulation at the Pentacene-oxide interface are significantly enhanced. An analytical model for improved electric field is presented for this device. The simulated results show the improved drive current performance as compared to the single bottom gate staggered OFET at lower gate voltage. Due to lower operating voltage the device electrical stability and device operating time is improved.