Title :
Current status of ZnMgSSe-based LDs
Author :
Okuyama, H. ; Ishibashi, A.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
Abstract :
In recent years, short-wavelength semiconductor lasers have been well investigated. This is because a light source suitable for 10GB-class mass-storage optical-disk system has been anticipated. In this paper, we report recent progress in ZnSe-based II-VI compound semiconductor lasers, particularly lasers using ZnMgSSe cladding layers.
Keywords :
II-VI semiconductors; laser beam applications; magnesium compounds; optical disc storage; semiconductor lasers; zinc compounds; 10 Gbit; 10GB-class mass-storage optical-disk system; ZnMgSSe; ZnMgSSe cladding layers; ZnMgSSe-based LDs; ZnSe-based II-VI compound semiconductor lasers; light source; short-wavelength semiconductor lasers; Degradation; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical buffering; Optical superlattices; Semiconductor lasers; Substrates; Temperature; Threshold current;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619193
