Title :
Via failures due to water emission from SOG
Author :
Hamanaka, M. ; Dohmae, S. ; Fujiwara, K. ; Shishino, M. ; Mayumi, S.
Author_Institution :
Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan
Abstract :
Via failures in multi-level metallization with the sandwich-type structure in which spin-on-glass (SOG) is sandwiched by SiO/sub 2/ films grown by plasma-enhanced chemical vapor deposition (P-SiO/sub 2/) have been studied. A poor via chain yield was obtained when the upper P-SiO/sub 2/ was deposited at a higher temperature than 260/spl deg/C. Water emission characteristics of the sandwich structure were measured. A new phenomenological model to explain the poisoned-via failure is proposed as follows. A thin water permeable P-SiO/sub 2/ layer may be formed on the boundary between SOG and the upper P-SiO/sub 2/. Water contained in SOG passes through this thin layer and is emitted into via holes during the subsequent metallization process. The moisture oxidizes the first metal surface and causes via open failures. Depositing the upper P-SiO/sub 2/ at a relatively low temperature of around 200/spl deg/C can suppress the failure and realize highly reliable vias in submicron scale.<>
Keywords :
circuit reliability; failure analysis; glass; integrated circuit technology; metallisation; moisture; oxidation; 200 C; 260 C; PECVD; SOG; SiO/sub 2/; SiO/sub 2/ films; chemical vapor deposition; multilevel metallization; open failures; oxidation; phenomenological model; plasma-enhanced CVD; sandwich-type structure; spin-on-glass; submicron scale; via chain yield; via failure; water emission; Chemical vapor deposition; Curing; Metallization; Planarization; Plasma applications; Plasma chemistry; Plasma measurements; Plasma temperature; Space technology; Sputter etching;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307806
