Title :
Novel failure analysis techniques using photon probing with a scanning optical microscope
Author :
Cole, Edward I., Jr. ; Soden, Jerry M. ; Rife, James L. ; Barton, Daniel L. ; Henderson, C.L.
Author_Institution :
Failure Anal. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Three new failure analysis techniques for integrated circuits (ICs) have been developed using localized photon probing with a scanning optical microscope (SOM). The first two are light-induced voltage alteration (LIVA) imaging techniques that (1) localize open-circuited and damaged junctions and (2) image transistor logic states. The third technique uses the SOM to control logic states optically from the IC backside. LIVA images are produced by monitoring the voltage fluctuations of a constant current power supply as a laser beam is scanned over the IC. High selectivity for localizing defects has been demonstrated using the LIVA approach. Logic state mapping results, similar to previous work using biased optical beam induced current (OBIC) and laser probing approaches, have also been produced using LIVA. Application of the two LIVA based techniques to backside failure analysis has been demonstrated using an infrared laser source. Optical logic state control is based upon earlier work examining transistor response to photon injection. The physics of each method and their applications for failure analysis are described.<>
Keywords :
circuit reliability; failure analysis; integrated circuit testing; measurement by laser beam; optical microscopy; damaged junctions; failure analysis techniques; integrated circuits; laser beam; light-induced voltage alteration imaging; logic state mapping; open-circuited junctions; photon probing; scanning optical microscope; transistor logic states; Failure analysis; Integrated optics; Laser theory; Logic; Optical beams; Optical control; Optical imaging; Optical microscopy; Photonic integrated circuits; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307808