Title :
A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides
Author :
Ren, Shen ; Rong, Yiwen ; Claussen, Stephanie ; Schaevitz, Rebecca ; Kamins, Theodore I. ; Harris, James S. ; Miller, David A B
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We present a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides. The integrated device shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.
Keywords :
Ge-Si alloys; integrated optics; optical modulation; optical waveguides; quantum confined Stark effect; quantum well devices; silicon-on-insulator; Ge-SiGe; SOI waveguides; quantum well QCSE waveguide modulator; voltage 1 V; Optical device fabrication; Optical modulation; Optical waveguides; Silicon; Silicon germanium; Temperature measurement; germanium quantum well; optical interconnects; optical waveguide modulator; quantum-confined Stark Effect;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053699
