High temperature stressing of SiC JFETs at 300/spl deg/C

Silicon carbide is an important emerging semiconductor technology for high power and high temperature applications. Although many papers in the literature report some of the characteristics and advantages of various SiC devices, very little information is available on the test and operation of these devices for an extended period of time. For our study a special lot of SiC JFETs was fabricated and packaged by CREE Research Inc. These devices were delivered to the Army Research Laboratory where they have been electrically characterized, radiation tested and, as reported here, subjected to thermal stress at 300/spl deg/C for 1000 hours under various bias conditions.<>