DocumentCode
1956371
Title
10 Gbit/s silicon modulator based on interdigitated PN junctions
Author
Ziebell, M. ; Marris-Morini, D. ; Rasigade, G. ; Crozat, P. ; Fédéli, J-M ; Grosse, P. ; Cassan, E. ; Vivien, L.
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
17
Lastpage
19
Abstract
Silicon modulator based on interdigitated PN junctions integrated in a ring resonator is experimentally demonstrated, showing a 4 dB Extinction Ratio at 10 Gbit/s.
Keywords
electro-optical modulation; optical resonators; p-n junctions; silicon; bit rate 10 Gbit/s; extinction ratio; interdigitated PN junctions; ring resonator; silicon modulator; High speed optical techniques; Optical device fabrication; Optical modulation; Optical ring resonators; Optical waveguides; Silicon; Silicon; high frequency; modulation; ring resonator;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053701
Filename
6053701
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