DocumentCode
1956386
Title
Simulating total-dose radiation effects on circuit behavior
Author
Tu, Robert ; Lum, Gary ; Pavan, Paolo ; Ko, Ping ; Hu, Chenming
Author_Institution
Electron. Res. Lab., California Univ., Berkeley, CA, USA
fYear
1994
fDate
11-14 April 1994
Firstpage
344
Lastpage
350
Abstract
Using RAD, a new module of Berkeley Reliability Tools (BERT), as a tool, users can design circuits to be radiation hard and characterize circuit behavior in environments where radiation is present. Previous simulators could not provide circuit output waveforms after radiation because it was difficult to simulate the effect of radiation on a circuit in operation (AC bias condition) and because radiation affected MOSFETs of different processes in different ways. We have dealt with these problems and for the first time, successfully provided "SPICE-like" simulation results.<>
Keywords
MOS integrated circuits; SPICE; circuit CAD; circuit reliability; digital simulation; radiation hardening (electronics); AC bias condition; Berkeley Reliability Tools; RAD; SPICE-like simulation; circuit behavior; circuit output waveforms; radiation hard circuits; total-dose radiation effects; Bit error rate; Circuit simulation; Data mining; Degradation; Interface states; MOSFETs; Missiles; Nuclear power generation; Radiation effects; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307814
Filename
307814
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