DocumentCode :
1956386
Title :
Simulating total-dose radiation effects on circuit behavior
Author :
Tu, Robert ; Lum, Gary ; Pavan, Paolo ; Ko, Ping ; Hu, Chenming
Author_Institution :
Electron. Res. Lab., California Univ., Berkeley, CA, USA
fYear :
1994
fDate :
11-14 April 1994
Firstpage :
344
Lastpage :
350
Abstract :
Using RAD, a new module of Berkeley Reliability Tools (BERT), as a tool, users can design circuits to be radiation hard and characterize circuit behavior in environments where radiation is present. Previous simulators could not provide circuit output waveforms after radiation because it was difficult to simulate the effect of radiation on a circuit in operation (AC bias condition) and because radiation affected MOSFETs of different processes in different ways. We have dealt with these problems and for the first time, successfully provided "SPICE-like" simulation results.<>
Keywords :
MOS integrated circuits; SPICE; circuit CAD; circuit reliability; digital simulation; radiation hardening (electronics); AC bias condition; Berkeley Reliability Tools; RAD; SPICE-like simulation; circuit behavior; circuit output waveforms; radiation hard circuits; total-dose radiation effects; Bit error rate; Circuit simulation; Data mining; Degradation; Interface states; MOSFETs; Missiles; Nuclear power generation; Radiation effects; SPICE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
Type :
conf
DOI :
10.1109/RELPHY.1994.307814
Filename :
307814
Link To Document :
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