DocumentCode
1956417
Title
FAMAS: FAult Modeling via Adaptive Simulation
Author
Jin, Haiming ; Iyer, Ravishankar K. ; Hsueh, M.C. ; Covington, Maiko
Author_Institution
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
fYear
1997
fDate
4-7 Jan 1997
Firstpage
413
Lastpage
417
Abstract
This paper describes FAMAS-FAult Modeling via Adaptive Simulation: a software tool that models transient faults and evaluates their impact on latch error probabilities through fault injection. The tool integrates DESSIS (a device-physics-level simulator) and SPICE using an adaptive approach. The behavior of electron hole pairs is captured for semiconductor devices under ionic radiation. Changes in bias voltage due to current surge are taken into account in an iterative fashion during the process of fault model construction. Results show that in general, the adaptively simulated fault model results in higher latch error probabilities than the Messenger model under the same process and electrical conditions
Keywords
SPICE; fault diagnosis; integrated circuit modelling; transient analysis; DESSIS; FAMAS; SPICE; adaptive simulation; current surge; device-physics-level simulator; electron hole pairs; fault injection; ionic radiation; latch error probability; semiconductor device; software tool; transient fault modeling; Circuit faults; Circuit simulation; Computational modeling; Digital systems; Error probability; Latches; SPICE; Semiconductor device modeling; Surges; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 1997. Proceedings., Tenth International Conference on
Conference_Location
Hyderabad
ISSN
1063-9667
Print_ISBN
0-8186-7755-4
Type
conf
DOI
10.1109/ICVD.1997.568168
Filename
568168
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