• DocumentCode
    1956417
  • Title

    FAMAS: FAult Modeling via Adaptive Simulation

  • Author

    Jin, Haiming ; Iyer, Ravishankar K. ; Hsueh, M.C. ; Covington, Maiko

  • Author_Institution
    Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
  • fYear
    1997
  • fDate
    4-7 Jan 1997
  • Firstpage
    413
  • Lastpage
    417
  • Abstract
    This paper describes FAMAS-FAult Modeling via Adaptive Simulation: a software tool that models transient faults and evaluates their impact on latch error probabilities through fault injection. The tool integrates DESSIS (a device-physics-level simulator) and SPICE using an adaptive approach. The behavior of electron hole pairs is captured for semiconductor devices under ionic radiation. Changes in bias voltage due to current surge are taken into account in an iterative fashion during the process of fault model construction. Results show that in general, the adaptively simulated fault model results in higher latch error probabilities than the Messenger model under the same process and electrical conditions
  • Keywords
    SPICE; fault diagnosis; integrated circuit modelling; transient analysis; DESSIS; FAMAS; SPICE; adaptive simulation; current surge; device-physics-level simulator; electron hole pairs; fault injection; ionic radiation; latch error probability; semiconductor device; software tool; transient fault modeling; Circuit faults; Circuit simulation; Computational modeling; Digital systems; Error probability; Latches; SPICE; Semiconductor device modeling; Surges; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 1997. Proceedings., Tenth International Conference on
  • Conference_Location
    Hyderabad
  • ISSN
    1063-9667
  • Print_ISBN
    0-8186-7755-4
  • Type

    conf

  • DOI
    10.1109/ICVD.1997.568168
  • Filename
    568168