DocumentCode :
1956442
Title :
GeSn on Si photodetectors grown by molecular beam epitaxy
Author :
Su, S.J. ; Xue, C.L. ; Cheng, B.W. ; Wang, W. ; Zhang, G.Z. ; Zuo, Y.H. ; Wang, Q.M.
Author_Institution :
State Key Lab. on Integrated Optoelectron., Beijing, China
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
33
Lastpage :
35
Abstract :
High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge0.97Sn0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.
Keywords :
elemental semiconductors; germanium alloys; molecular beam epitaxial growth; photodetectors; photodiodes; silicon; tin alloys; Ge-buffered Si substrates; Ge0.97Sn0.03; GeSn alloys; GeSn photodiodes; Si; Si photodetectors; molecular beam epitaxial growth; telecommunication bands; Molecular beam epitaxial growth; Photodetectors; Silicon; Substrates; Thermal stability; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053706
Filename :
6053706
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1956442
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