DocumentCode :
1956492
Title :
Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction
Author :
Takenaka, M. ; Morii, K. ; Sugiyama, M. ; Nakano, Y. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
36
Lastpage :
38
Abstract :
Dark current reduction of Ge photodetectors has been investigated by GeO2 passivation and gas-phase doped junction. Ultralow junction and surface leakages indicate the dark current of <; 1 nA is achievable in the waveguide geometry.
Keywords :
elemental semiconductors; germanium; germanium compounds; passivation; photodetectors; semiconductor doping; Ge; GeO2; dark current reduction; gas-phase doped junction; passivation; surface leakage; ultralow-dark-current photodetector; waveguide geometry; Dark current; Doping; Ion implantation; Junctions; Oxidation; Passivation; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053707
Filename :
6053707
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1956492
بازگشت