Title :
Long wavelength triangular shaped waveguide diode ring laser with dry etched facets
Author :
Chen Ji ; Ballantyne, J.M.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Summary form only given. Semiconductor ring lasers in unidirectional operation set up a traveling wave inside the cavity, thus avoiding the standing wave spatial hole burning effects relevant in DFB and Fabry-Perot lasers. This results in high spectral purity and hence lowering intensity noise by reducing the mode partition noise. Among the triangular square and circular ring lasers reported, the first mentioned geometry is attractive because of its inherent output coupler and demonstrated power efficiency. We report record low threshold current and large side mode suppression ratio (SMSR) for long wavelength triangular ring InGaAsP QW lasers.
Keywords :
distributed feedback lasers; etching; gallium arsenide; gallium compounds; indium compounds; laser modes; quantum well lasers; ring lasers; waveguide lasers; DFB lasers; Fabry-Perot lasers; InGaAsP; InGaAsP QW lasers; circular ring lasers; dry etched facets; geometry; high spectral purity; inherent output coupler; intensity noise; large side mode suppression ratio; long wavelength triangular shaped waveguide diode ring laser; low threshold current; mode partition noise; power efficiency; semiconductor ring lasers; spatial hole burning; triangular square; unidirectional operation; Fabry-Perot; Laser modes; Laser noise; Noise reduction; Ring lasers; Semiconductor device noise; Semiconductor diodes; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619196