Title :
Photon emission study of ESD protection devices under second breakdown conditions
Author :
Ishizuka, Hiroyasu ; Okuyama, Kousuke ; Kubota, Katsuhiko
Author_Institution :
Hitachi Yonezawa Electron. Co. Ltd., Yamagata, Japan
Abstract :
The relationship between ESD performance and photon emission from MOSFETs under breakdown conditions has been studied for various drain structures. Since ESD protection level is well correlated with current driveability in the second breakdown region, observation of the spatial distribution of photon emission provides new insight to the understanding of breakdown behaviors resulting in different ESD performance. The photon emission study revealed that the three-dimensional progression of breakdown behaviors depends on drain structures and are correlated with ESD performance.<>
Keywords :
electric breakdown of solids; electrostatic discharge; insulated gate field effect transistors; luminescence; protection; ESD protection devices; MOSFETs; drain structures; photon emission; second breakdown conditions; spatial distribution; Breakdown voltage; Degradation; Electric breakdown; Electrostatic discharge; Hot carriers; MOSFETs; Optical filters; Photonic integrated circuits; Protection; Semiconductor device breakdown;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307822
