A physically-based low-frequency noise model for NFD SOI MOSFET´s

Author

Jin, W. ; Chan, P.C.H. ; Fung, S.K.H. ; Ko, P.K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

23

Lastpage

24

Abstract

The floating-body effect (FBE) in nonfully-depleted (NFD) SOI MOSFETs gives rise to excess low-frequency noise. For the first time, the origin of the excess noise is identified to be the shot noise associated with impact ionization current and body-source diode current. The shot noise, normally negligible as compared with flicker noise, is amplified in the device through FBE. The noise model predicts that the excess low-frequency noise shows a Lorentzian-like spectrum as verified by experimental data. The physical explanation is further supported by the coincidence of the corner frequency in the noise spectrum and the AC output impedance.

Keywords

1/f noise; MOSFET; flicker noise; impact ionisation; semiconductor device models; semiconductor device noise; shot noise; silicon-on-insulator; AC output impedance; FBE shot noise amplification; Lorentzian-like spectrum; NFD SOI MOSFETs; Si-SiO/sub 2/; body-source diode current; corner frequency; excess noise; flicker noise; floating-body effect; impact ionization current; low-frequency noise; noise model; noise spectrum; nonfully-depleted SOI MOSFETs; physically-based low-frequency noise model; shot noise; 1f noise; Circuit noise; Equations; Frequency; Impact ionization; Impedance; Low-frequency noise; MOSFET circuits; Noise measurement; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723084

Filename

723084