DocumentCode
1956635
Title
Built-in reliability through sodium elimination
Author
Chinn, Jeff ; Ho, Yueh-se ; Chang, Mike ; Turner, Timothy
Author_Institution
Siliconix Inc., Santa Clara, CA, USA
fYear
1994
fDate
11-14 April 1994
Firstpage
249
Lastpage
251
Abstract
Minute amounts of sodium can cause semiconductor devices to fail. Wafer processors have steadily reduced sodium content to increasingly low levels in the gate oxide area. However, levels as high as 5E18 cm/sup -3/ are still commonly detected around metal layers in the industry. The industry has until now relied on the BPSG layer to prevent penetration into the active gate area. This approach is usually effective, but not bulletproof. Pinholes or thin spots in BPSG film still allow sodium ions to seep through. This protective or inter-dielectric layer. As part of a strong commitment to achieve built-in reliability, Siliconix launched a project to totally eliminate sodium from its products. As reported in this paper. We have successfully reduced the presence of sodium down to the SIMS detection level.<>
Keywords
borosilicate glasses; circuit reliability; integrated circuit technology; metallisation; phosphosilicate glasses; protective coatings; sodium; B2O3-P2O5-SiO2; BPSG; BPSG film; Na elimination; Siliconix; built-in reliability; interdielectric layer; protective layer; semiconductor devices failure; Ash; Contamination; Metallization; Metals industry; Pollution measurement; Resists; Semiconductor device manufacture; Semiconductor devices; US Department of Energy; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307829
Filename
307829
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