• DocumentCode
    1956635
  • Title

    Built-in reliability through sodium elimination

  • Author

    Chinn, Jeff ; Ho, Yueh-se ; Chang, Mike ; Turner, Timothy

  • Author_Institution
    Siliconix Inc., Santa Clara, CA, USA
  • fYear
    1994
  • fDate
    11-14 April 1994
  • Firstpage
    249
  • Lastpage
    251
  • Abstract
    Minute amounts of sodium can cause semiconductor devices to fail. Wafer processors have steadily reduced sodium content to increasingly low levels in the gate oxide area. However, levels as high as 5E18 cm/sup -3/ are still commonly detected around metal layers in the industry. The industry has until now relied on the BPSG layer to prevent penetration into the active gate area. This approach is usually effective, but not bulletproof. Pinholes or thin spots in BPSG film still allow sodium ions to seep through. This protective or inter-dielectric layer. As part of a strong commitment to achieve built-in reliability, Siliconix launched a project to totally eliminate sodium from its products. As reported in this paper. We have successfully reduced the presence of sodium down to the SIMS detection level.<>
  • Keywords
    borosilicate glasses; circuit reliability; integrated circuit technology; metallisation; phosphosilicate glasses; protective coatings; sodium; B2O3-P2O5-SiO2; BPSG; BPSG film; Na elimination; Siliconix; built-in reliability; interdielectric layer; protective layer; semiconductor devices failure; Ash; Contamination; Metallization; Metals industry; Pollution measurement; Resists; Semiconductor device manufacture; Semiconductor devices; US Department of Energy; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
  • Conference_Location
    San Jose, CA, USA
  • Print_ISBN
    0-7803-1357-7
  • Type

    conf

  • DOI
    10.1109/RELPHY.1994.307829
  • Filename
    307829