Title :
Influence of BiCMOS processing steps on thin gate oxide quality
Author :
Whiston, Seamus ; Stakelum, Bob ; Neill, Mike O. ; Lane, William
Author_Institution :
Analog Devices B.V., Limerick, Ireland
Abstract :
This paper reports on the work carried out on the improvement of gate oxide quality on a 1.0 /spl mu/m BICMOS process. The gate oxide defectivity was improved by partitioning the process into key process blocks and examining the contribution of each block to the overall defect level. Case studies from each block are presented which describe the weaknesses identified and the solutions implemented which have resulted in a robust and manufacturable process. A short loop process monitor is also described.<>
Keywords :
BiCMOS integrated circuits; integrated circuit manufacture; integrated circuit technology; monitoring; process control; quality control; 1 micron; BiCMOS processing steps; manufacturable process; short loop process monitor; thin gate oxide quality; BiCMOS integrated circuits; Costs; Dielectric substrates; Integrated circuit reliability; Integrated circuit yield; MOS capacitors; Monitoring; Resistors; Robustness; Testing;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307830
