DocumentCode
1956670
Title
Silicon carbide phononic crystals for high f.Q micromechanical resonators
Author
Ziaei-Moayyed, M. ; Su, M.F. ; Reinke, C.M. ; El-Kady, I. ; Olsson, R.H., III
Author_Institution
Adv. MEMS Dept., Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
162
Lastpage
166
Abstract
This paper demonstrates silicon carbide phononic crystal cavities for RF and microwave micromechanical resonators. We demonstrate design and simulation of silicon carbide/air phononic crystals used as Bragg acoustic mirrors to confine energy in a silicon carbide cavity. Aluminum nitride piezoelectric transducers are used for drive and sense of silicon carbide overtone cavities at 2.3 GHz with quality factors exceeding 3,500 in air. This approach enables decoupling of the piezoelectric material from the cavity quality factor, resulting in high f.Q products at microwave frequencies. The silicon carbide phononic crystal cavities are fabricated in a CMOS-compatible process, for integration in wireless communication systems.
Keywords
III-V semiconductors; acoustic resonators; aluminium compounds; microcavities; micromechanical resonators; microwave resonators; phononic crystals; piezoelectric transducers; silicon compounds; wide band gap semiconductors; AlN; Bragg acoustic mirrors; CMOS-compatible process; RF micromechanical resonator; SiC; aluminum nitride piezoelectric transducers; cavity quality factor; frequency 2.3 GHz; microwave frequencies; microwave micromechanical resonator; piezoelectric material; silicon carbide overtone cavities; silicon carbide phononic crystal cavities; silicon carbide-air phononic crystals; wireless communication systems; Acoustics; Cavity resonators; Crystals; Photonic band gap; Q factor; Silicon carbide; Acoustic Bandgap; Acoustic Cavity; Acoustic Resonator; Micromechanical resonator; Phononic Bandgap; Phononic Crystal Cavity; Phononic Crystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location
San Diego, CA
ISSN
1948-5719
Print_ISBN
978-1-4577-0382-9
Type
conf
DOI
10.1109/ULTSYM.2010.5935682
Filename
5935682
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