DocumentCode :
1956670
Title :
Silicon carbide phononic crystals for high f.Q micromechanical resonators
Author :
Ziaei-Moayyed, M. ; Su, M.F. ; Reinke, C.M. ; El-Kady, I. ; Olsson, R.H., III
Author_Institution :
Adv. MEMS Dept., Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
162
Lastpage :
166
Abstract :
This paper demonstrates silicon carbide phononic crystal cavities for RF and microwave micromechanical resonators. We demonstrate design and simulation of silicon carbide/air phononic crystals used as Bragg acoustic mirrors to confine energy in a silicon carbide cavity. Aluminum nitride piezoelectric transducers are used for drive and sense of silicon carbide overtone cavities at 2.3 GHz with quality factors exceeding 3,500 in air. This approach enables decoupling of the piezoelectric material from the cavity quality factor, resulting in high f.Q products at microwave frequencies. The silicon carbide phononic crystal cavities are fabricated in a CMOS-compatible process, for integration in wireless communication systems.
Keywords :
III-V semiconductors; acoustic resonators; aluminium compounds; microcavities; micromechanical resonators; microwave resonators; phononic crystals; piezoelectric transducers; silicon compounds; wide band gap semiconductors; AlN; Bragg acoustic mirrors; CMOS-compatible process; RF micromechanical resonator; SiC; aluminum nitride piezoelectric transducers; cavity quality factor; frequency 2.3 GHz; microwave frequencies; microwave micromechanical resonator; piezoelectric material; silicon carbide overtone cavities; silicon carbide phononic crystal cavities; silicon carbide-air phononic crystals; wireless communication systems; Acoustics; Cavity resonators; Crystals; Photonic band gap; Q factor; Silicon carbide; Acoustic Bandgap; Acoustic Cavity; Acoustic Resonator; Micromechanical resonator; Phononic Bandgap; Phononic Crystal Cavity; Phononic Crystals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
ISSN :
1948-5719
Print_ISBN :
978-1-4577-0382-9
Type :
conf
DOI :
10.1109/ULTSYM.2010.5935682
Filename :
5935682
Link To Document :
بازگشت