The effect of plasma-induced oxide and interface degradation on hot carrier reliability

Author

Noguchi, Ko ; Okumura, Koichiro

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan

fYear

1994

fDate

11-14 April 1994

Firstpage

232

Lastpage

237

Abstract

A simple method is proposed to quantitatively evaluate hot carrier reliability of a plasma-stressed PMOSFET using its characteristic degradation measured before forming gas annealing. This method is used to deduce a plasma-stress equivalent charging current. This plasma current increases with a decrease in gate oxide thickness. The hot carrier reliability of thinner oxides, however, is less influenced. Superior immunity of reoxidized-nitrided-oxide to hot carrier degradation after plasma stress is also demonstrated.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; reliability; sputter etching; RNO; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; gate oxide thickness; hot carrier immunity; hot carrier reliability; p-channel MOSFET; plasma-induced interface degradation; plasma-induced oxide degradation; plasma-stress equivalent charging current; plasma-stressed PMOSFET; Annealing; Degradation; Etching; Hot carriers; MOSFET circuits; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307832

Filename

307832