DocumentCode
1956781
Title
Wide line, low current electromigration in Al-Cu metallization with refractory underlayer
Author
Baerg, Bill ; Crandall, Rob ; Wu, Ken
Author_Institution
Intel Corp., Santa Clara, CA, USA
fYear
1994
fDate
11-14 April 1994
Firstpage
192
Lastpage
197
Abstract
A one-year electromigration experiment was performed on an 8.9 /spl mu/m wide serpentine metal structure, at stress current densities from 0.3 to 1.3 MA/cm/sup 2/. Resistance decreases were observed and explained, and used to estimate a drift velocity which is linearly proportional to the difference between the stress current and the current threshold. The activation energy was found to be approximately 1.1 eV.<>
Keywords
aluminium alloys; circuit reliability; copper alloys; current density; electromigration; failure analysis; integrated circuit technology; metallisation; 8.9 micron; Al-Cu metallization; AlCu; activation energy; drift velocity; low current electromigration; refractory underlayer; serpentine metal structure; wide line metal; Bonding; Circuit testing; Current density; Electromigration; Electrons; Metallization; Passivation; Stress; System testing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307837
Filename
307837
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