Ge quantum well resonator modulators

Author

Edwards, Elizabeth H. ; Audet, Ross M. ; Fei, Edward ; Shambat, Gary ; Schaevitz, Rebecca K. ; Rong, Yiwen ; Claussen, Stephanie A. ; Kamins, Theodore I. ; Vuckovic, Jelena ; Harris, James S. ; Miller, David A B

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2011

fDate

14-16 Sept. 2011

Firstpage

80

Lastpage

82

Abstract

The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. We demonstrate surface-normal asymmetric Fabry-Perot and microdisk resonator modulators employing Ge quantum wells grown on silicon.

Keywords

Fabry-Perot resonators; Ge-Si alloys; electro-optical modulation; electroabsorption; integrated optics; semiconductor quantum wells; CMOS-compatible integrated optical modulators; Ge quantum well resonator modulators; Ge-SiGe; electroabsorption modulation; microdisk resonator modulators; surface-normal asymmetric Fabry-Perot resonators; Absorption; Modulation; Optical resonators; Optical surface waves; Silicon; Silicon germanium; Surface treatment; SiGe; electroabsorption; integrated optoelectronics; interconnects; modulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2011 8th IEEE International Conference on

Conference_Location

London

ISSN

1949-2081

Print_ISBN

978-1-4244-8338-9

Type

conf

DOI

10.1109/GROUP4.2011.6053722

Filename

6053722