Stress-induced low-level leakage mechanism in ultrathin silicon dioxide films caused by neutral oxide trap generation

Author

Kimura, Mikihiro ; Koyama, Hiroshi

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1994

fDate

11-14 April 1994

Firstpage

167

Lastpage

172

Abstract

Stress-induced low-level leakage current in ultrathin silicon dioxide films is correlated with neutral oxide trap generation based on first-order kinetics. The conduction mechanism is explained by Fowler-Nordheim tunneling from the leakage spot, generated at the cathode interface, to the neutral oxide trap level, lower in energy than the SiO/sub 2/ barrier height.<>

Keywords

dielectric thin films; electron traps; hole traps; leakage currents; metal-insulator-semiconductor structures; reaction kinetics; reliability; silicon compounds; tunnelling; Fowler-Nordheim tunneling; MOS structures; Si-SiO/sub 2/; SiO/sub 2/; SiO/sub 2/ barrier height; cathode interface; conduction mechanism; first-order kinetics; leakage spot; neutral oxide trap generation; neutral oxide trap level; stress-induced low-level leakage current; stress-induced low-level leakage mechanism; ultrathin silicon dioxide films; Dielectric measurements; Electron traps; Interface states; Leakage current; Semiconductor films; Silicon compounds; Stress measurement; Tunneling; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1357-7

Type

conf

DOI

10.1109/RELPHY.1994.307841

Filename

307841