Accurate simulation of EPROM hot-carrier induced degradation using physics based interface and oxide charge generation models

In this work, we present a self-consistent simulation method based on physical models that can correctly predict the Ids, Isub, and Igs degradation with few physical parameters. The effects of the interface and oxide charges on device degradation have been clearly identified without assuming any predetermined interface and oxide charge spatial distributions. Simulation results indicate a much lower electron energy than 3.2 eV can create the interface states which results in an interface damage lateral distribution much wider than that of the oxide damage. This method has been successfully used to simulate a 0.5 /spl mu/m EPROM device degradation in critical operation regions.<>