Title :
Characterization of hot-carrier effects in thin-film fully-depleted SOI MOSFETs
Author :
Ma, Z.J. ; Wann, H.-J. ; Chan, M. ; King, J. ; Cheng, Y.C. ; Ko, P.K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Previous conflicting reports concerning fully-depleted SOI device hot electron reliability is partially due to misunderstanding over the maximum channel electric field (E/sub m/). Experimental results using SOI MOSFETs with body contacts indicate that E/sub m/ is just a weak function of thin-film SOI thickness (T/sub si/) and E/sub m/ can be significantly lower than in a bulk device with drain junction depth (X/sub j/) comparable to T/sub si/ The theoretical correlation between SOI MOSFET´s gate current and substrate current are experimentally confirmed. This provides a means (I/sub G/) of studying E, in SOI device without body contacts. Both N- and P-MOSFETs can have better hot-carrier reliability than comparable bulk devices. Thin film SOI MOSFETs have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.<>
Keywords :
hot carriers; insulated gate field effect transistors; reliability; semiconductor-insulator boundaries; N-MOSFETs; P-MOSFETs; SOI MOSFET gate current; SOI MOSFETs; SOI device hot electron reliability; body contacts; breakdown voltage; bulk device; drain junction depth; fully-depleted; hot-carrier effects; hot-carrier reliability; maximum channel electric field; substrate current; thin-film; thin-film SOI thickness; Bismuth; Current measurement; Electrons; Hot carrier effects; Hot carriers; Implants; MOS devices; MOSFET circuits; Substrates; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1357-7
DOI :
10.1109/RELPHY.1994.307857
