DocumentCode :
1957114
Title :
Electrical and optical properties of ion implanted SOI-based photonic crystals
Author :
Cardile, Paolo ; Franzò, Giorgia ; Savio, Roberto Lo ; Galli, Matteo ; Krauss, Thomas F. ; Priolo, Francesco ; Faolain, L.O.
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
115
Lastpage :
117
Abstract :
We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found.
Keywords :
boron; doping profiles; electrical conductivity; elemental semiconductors; ion implantation; optical losses; photonic crystals; semiconductor doping; silicon-on-insulator; voids (solid); L3 cavities; Si:B; air filling factor; conductivity; doping level; electrical properties; ion implanted SOI-based photonic crystals; optical losses; optical properties; silicon-on-insulator photonic crystals; Boron; Cavity resonators; Doping; Filling; Photonic crystals; Q factor; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053734
Filename :
6053734
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1957114
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