DocumentCode
1957114
Title
Electrical and optical properties of ion implanted SOI-based photonic crystals
Author
Cardile, Paolo ; Franzò, Giorgia ; Savio, Roberto Lo ; Galli, Matteo ; Krauss, Thomas F. ; Priolo, Francesco ; Faolain, L.O.
fYear
2011
fDate
14-16 Sept. 2011
Firstpage
115
Lastpage
117
Abstract
We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found.
Keywords
boron; doping profiles; electrical conductivity; elemental semiconductors; ion implantation; optical losses; photonic crystals; semiconductor doping; silicon-on-insulator; voids (solid); L3 cavities; Si:B; air filling factor; conductivity; doping level; electrical properties; ion implanted SOI-based photonic crystals; optical losses; optical properties; silicon-on-insulator photonic crystals; Boron; Cavity resonators; Doping; Filling; Photonic crystals; Q factor; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location
London
ISSN
1949-2081
Print_ISBN
978-1-4244-8338-9
Type
conf
DOI
10.1109/GROUP4.2011.6053734
Filename
6053734
Link To Document