DocumentCode
1957122
Title
Gate oxide thickness effect on hot carrier reliability in 0.35 /spl mu/m NMOS device
Author
Aur, Shim ; Chapman, Richard A.
Author_Institution
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
fYear
1994
fDate
11-14 April 1994
Firstpage
48
Lastpage
51
Abstract
The purpose of this paper is to study nMOS hot carrier reliability dependence on gate oxide thickness in 0.35 /spl mu/m devices. It is found that the gate oxide thickness effect in 0.35 /spl mu/m NMOS is primarily due to channel inversion charge difference and not due to smaller mobility degradation in thinner oxide as previously reported for 0.8 /spl mu/m NMOS.<>
Keywords
hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device models; semiconductor device testing; 0.35 /spl mu/m devices; 0.35 mum; MOSFETs; NMOS device; channel inversion charge difference; gate oxide thickness effect; hot carrier reliability; mobility degradation; nMOS hot carrier reliability dependence; Degradation; Hot carriers; Instruments; Interface states; MOS devices; Process design; Semiconductor device reliability; Stress; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1994. 32nd Annual Proceedings., IEEE International
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1357-7
Type
conf
DOI
10.1109/RELPHY.1994.307858
Filename
307858
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